PART |
Description |
Maker |
Q62703-Q1088 SFH482-ME7800 SFH480 Q62703-Q1089 Q62 |
GaAlAs-IR-Lumineszenzdioden 880 nm GaAlAs Infrared Emitters 880 nm 发动器,红外Lumineszenzdioden 880纳米红外辐射器的GaAIAs 880纳米 GaAlAs-IR-Lumineszenzdioden 880 nm GaAlAs Infrared Emitters 880 nm 1 ELEMENT, INFRARED LED, 880 nm From old datasheet system
|
红外LED SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
HCMS-2902 HCMS-2903 HCMS-2904 HCMS-2911 HCMS-2912 |
HCMS-2962 · High Performance CMOS 5 x 7 Alphanumeric Displays HCMS-2961 · High Performance CMOS 5 x 7 Alphanumeric Displays HCMS-2964 · High Performance CMOS 5 x 7 Alphanumeric Displays HCMS-2963 · High Performance CMOS 5 x 7 Alphanumeric Displays HCMS-2925 · High Performance CMOS 5 x 7 Alphanumeric Displays HCMS-2924 · High Performance CMOS 5 x 7 Alphanumeric Displays HCMS-2923 · High Performance CMOS 5 x 7 Alphanumeric Displays HCMS-2922 · High Performance CMOS 5 x 7 Alphanumeric Displays HCMS-2921 · High Performance CMOS 5 x 7 Alphanumeric Displays HCMS-2915 · High Performance CMOS 5 x 7 Alphanumeric Displays HCMS-2914 · High Performance CMOS 5 x 7 Alphanumeric Displays HCMS-2913 · High Performance CMOS 5 x 7 Alphanumeric Displays HCMS-2912 · High Performance CMOS 5 x 7 Alphanumeric Displays HCMS-2911 · High Performance CMOS 5 x 7 Alphanumeric Displays HCMS-2905 · High Performance CMOS 5 x 7 Alphanumeric Displays HCMS-2904 · High Performance CMOS 5 x 7 Alphanumeric Displays HCMS-2903 · High Performance CMOS 5 x 7 Alphanumeric Displays HCMS-2902 · High Performance CMOS 5 x 7 Alphanumeric Displays HCMS-2901 · High Performance CMOS 5 x 7 Alphanumeric Displays HCMS-2975-HI000 · High Performance CMOS 5 x 7 Alphanumeric Displays Bipolar Transistor; Collector Emitter Voltage, Vceo:350V; Transistor Polarity:NPN; Power Dissipation:1W; DC Current Gain Min (hfe):40; Collector Current:1A; Package/Case:3-TO-39; DC Current Gain Max (hfe):60; Terminal Type:5 T-PNP-SI-HV AF PWR AMP High Performance CMOS 5 x 7 Alphanumeric Displays 高性能CMOS 5 × 7字母数字显示
|
http:// Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)] Vishay Intertechnology, Inc.
|
SFH7221 SFH7221-Z |
GaAlAs-IR-Lumineszenzdiode (880 nm) und Si-Fototransistor GaAlAs-Infrared-Emitter (880 nm) and Si-Phototransistor
|
OSA Opto Light GmbH OSRAM GmbH
|
Q62703-Q1094 SFH486 |
From old datasheet system GaAIAs-IR-Lumineszenzdiode 880 nm GaAIAs Infrared Emitter 880 nm
|
SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|
OIS-210880 OIS-210880-X-T |
Series 210 - side view IR high intensity 880 nm
|
OSA Opto Light GmbH
|
OIS-330880 OIS-330880-X-TD OIS-330880-X-TU |
Series 330 - 1206 with Lens IR high intensity 880 nm
|
OSA Opto Light GmbH
|
EM78P156EHAS EM78P156EHM EM78P156EHP EM78P156EHKM |
8-bit microprocessor with low-power and high-speed CMOS technology High-Performance, Single-Ended, Current-Mode PWM Controllers
|
ELAN Microelctronics Corp .
|
M4A3-512_256-10FAC M4A5-96/48-10VC M4A5-96/48-10VI |
High Performance E 2 CMOS In-System Programmable Logic EE PLD, 5.5 ns, PQCC44 High Performance E 2 CMOS In-System Programmable Logic EE PLD, 7.5 ns, PQCC44 High Performance E 2 CMOS In-System Programmable Logic EE PLD, 10 ns, PQCC44 High Performance E 2 CMOS In-System Programmable Logic EE PLD, 7.5 ns, PQFP44 High Performance E 2 CMOS In-System Programmable Logic EE PLD, 7.5 ns, PQFP144 High Performance E 2 CMOS In-System Programmable Logic EE PLD, 7.5 ns, PQFP48 CONNECTOR ACCESSORY CAP 1500UF 100V ELECT KMH SNAP High Performance E 2 CMOS In-System Programmable Logic
|
Lattice Semiconductor, Corp. Lattice Semiconductor Corporation
|
MIC5317-3.0YMT MIC5317-3.0YM5 MIC5317-3.0YD5 MIC53 |
High-Performance Single 150mA LDO
|
Micrel Semiconductor
|
SAB80535-N SAB80515-N SAB80515-N-40_85 SAB80535 SA |
HIGH-PERFORMANCE 8-BIT SINGLE CHIP MICROCONTROLLER
|
SIEMENS[Siemens Semiconductor Group]
|
UP6019PQMY |
High Performance Single Synchronous Step-Up Converter
|
uPI Group Inc.
|
MT3332 |
high-performance single-chip GPS solution
|
MediaTek, Inc.
|